Mixed-Dimensional Nanowires/Nanosheet Heterojunction of GaSb/Bi2O2Se for Self-Powered Near-Infrared Photodetection and Photocommunication
Guangcan Wang, Zixu Sa, Zeqi Zang, Pengsheng Li, Mingxu Wang, Bowen Yang, Xiaoyue Wang, Yanxue Yin, Zaixing Yang
Abstract
Abstract With high surface-to-volume ratio, the abundant surface states and high carrier concentration are challenging the near-infrared photodetection behaviors of narrow band gap semiconductors nanowires. In this study, the narrow band gap semiconductor of Bi 2 O 2 Se nanosheets (NSs) is adopted to construct mixed-dimensional heterojunctions with GaSb nanowires (NWs) for demonstrating the impressive self-powered NIR photodetection. Benefiting from the built-in electric field of ~ 140 meV, the as-constructed NW/NS mixed-dimensional heterojunction self-powered photodetector shows the low dark current of 0.07 pA, high I light / I dark ratio of 82 and fast response times of < 2/2 ms at room temperature. The self-powered photodetector performance can be further enhanced by fabricating the NW array/NS mixed-dimensional heterojunction by using a contact printing technique. The excellent photodetection performance promises the as-constructed NW/NS mixed-dimensional heterojunction self-powered photodetector in imaging and photocommunication.