Litcius/Paper detail

An SEU-hardened ternary SRAM design based on efficient ternary C-elements using CNTFET technology

Vahid Bakhtiary, Abdolah Amirany, Mohammad Hossein Moaiyeri, Kian Jafari

2022Microelectronics Reliability26 citationsDOI

Topics & Concepts

Ternary operationStatic random-access memoryCarbon nanotube field-effect transistorTransistorMemory cellVoltageMaterials scienceThreshold voltageElectronic engineeringComputer scienceField-effect transistorEngineeringElectrical engineeringProgramming languageRadiation Effects in ElectronicsSemiconductor materials and devicesLow-power high-performance VLSI design
An SEU-hardened ternary SRAM design based on efficient ternary C-elements using CNTFET technology | Litcius