Cryogenic Characterization of 16 nm FinFET Technology for Quantum Computing
Hung-Chi Han, Farzan Jazaeri, Antonio D’Amico, A. Basçhirotto, Edoardo Charbon, Christian Enz
Abstract
This study presents the first in depth characterization of deep cryogenic electrical behavior of a commercial 16 nm CMOS FinFET technology. This technology is well suited for a broad range of applications, including quantum computing, quantum sensing, and quantum communications. Cryogenic DC measurements and physical parameters extraction were carried out on this commercial FinFET technology, operating at room temperature, i.e., 300 K, and down to 2.95 K for different device types and geometries. This represents the main step towards cryogenic compact modeling and optimization of three-dimensional CMOS structures for quantum computations.
Topics & Concepts
CMOSQuantum computerCharacterization (materials science)Cryogenic temperatureOptoelectronicsQuantumCryogenicsMaterials scienceComputationElectronic engineeringComputer scienceElectrical engineeringEngineering physicsNanotechnologyPhysicsEngineeringQuantum mechanicsAlgorithmComposite materialSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignSilicon Carbide Semiconductor Technologies