High Current Density Vertical Nanowire TFETs With I₆₀ > 1 <i>μ</i>A/<i>μ</i>m
Gautham Rangasamy, Zhongyunshen Zhu, Lars‐Erik Wernersson
Abstract
We present experimental data for a vertical, 22-nm-diameter InAs/(In)GaAsSb nanowire Tunnel Field-Effect Transistor that exhibits the highest reported I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">60</sub> of 1.2 μA/μm, paving the way for low power applications. The transistor reaches a minimum subthreshold swing of 43 mV/dec at V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>DS</i></sub> = 300 mV with a sub-60 mV/dec operation over a wide current range. Combined with a high transconductance of 205 μS/μm, the ON-current for the same device is 18.6 μA/μm at V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>DS</i></sub> = 300 mV for I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>OFF</i></sub> of 1 nA/μm.