Thermal stress-assisted annealing to improve the crystalline quality of an epitaxial YSZ buffer layer on Si
Hyung‐Jin Choi, Jinhyuk Jang, Soo Young Jung, Ruiguang Ning, Min‐Seok Kim, Sung‐Jin Jung, Jun Young Lee, Jin Soo Park, Byung Chul Lee, Ji‐Soo Jang, Seong Keun Kim, Kyu Hyoung Lee, June Hyuk Lee, Sung Ok Won, Yulan Li, Shenyang Hu, Si‐Young Choi, Seung‐Hyub Baek
Abstract
A rapid heating rate (∼110 °C s −1 ) allows strain energy to maximally build up in the YSZ layer at the annealing temperature, and the defects are effectively annihilated during annealing.
Topics & Concepts
Materials scienceAnnealing (glass)Buffer (optical fiber)Yttria-stabilized zirconiaEpitaxyComposite materialOptoelectronicsChemical engineeringLayer (electronics)Cubic zirconiaElectrical engineeringCeramicEngineeringSemiconductor materials and devicesElectronic and Structural Properties of OxidesAcoustic Wave Resonator Technologies