Realization of monolayer ZrTe5 topological insulators with wide band gaps
Yongjie Xu, Guohua Cao, Qiyuan Li, Cheng-Long Xue, Weimin Zhao, Qiwei Wang, Li-Guo Dou, Du Xuan, Yu-Xin Meng, Y N Wang, Yuhang Gao, Zhen‐Yu Jia, Wei Li, Lianlian Ji, Fangsen Li, Zhenyu Zhang, Ping Cui, Dingyu Xing, Shao‐Chun Li
Abstract
Abstract Two-dimensional topological insulators hosting the quantum spin Hall effect have application potential in dissipationless electronics. To observe the quantum spin Hall effect at elevated temperatures, a wide band gap is indispensable to efficiently suppress bulk conduction. Yet, most candidate materials exhibit narrow or even negative band gaps. Here, via elegant control of van der Waals epitaxy, we have successfully grown monolayer ZrTe 5 on a bilayer graphene/SiC substrate. The epitaxial ZrTe 5 monolayer crystalizes in two allotrope isomers with different intralayer alignments of ZrTe 3 prisms. Our scanning tunneling microscopy/spectroscopy characterization unveils an intrinsic full band gap as large as 254 meV and one-dimensional edge states localized along the periphery of the ZrTe 5 monolayer. First-principles calculations further confirm that the large band gap originates from strong spin−orbit coupling, and the edge states are topologically nontrivial. These findings thus provide a highly desirable material platform for the exploration of the high-temperature quantum spin Hall effect.