Sensitivity and Mechanism Study of Single-Event Burnout in 4H-SiC Devices With FLRs Termination
Keyu Liu, Xiao-Yan Tang, Hao Yuan, Qingwen Song, Yancong Liu, Yu Zhou, Fengyu Du, Yuming Zhang
Abstract
The 4H-silicon carbide (SiC) junction barrier Schottky with field limiting rings (FLRs-JBS) termination was fabricated and analyzed to evaluate its radiation tolerance of the single-event burnout (SEB). Experimental and simulation results show that the SiC/SiO2/metal intersection is the most sensitive position in the FLRs-JBS. This work proposes that there are different mechanisms between the active and the terminal regions under heavy-ion irradiation for the first time. The simulation results show that the FLRs terminal area is more likely to burn out under single-event irradiation than the active area due to the serious current crowding effect. This work redefines the sensitive volume of the conventional FLRs-JBS under single-event irradiation, including the transition ring of the terminal zone, the part of the active area near the terminal zone, and the p+ island spacing of the active area.