Effect of interfacial SiO<sub>2</sub> layer thickness on the memory performances in the HfAlO<sub><i>x</i></sub>-based ferroelectric tunnel junction for a neuromorphic system
Yongjin Park, Jihyung Kim, Sunghun Kim, Sunghun Kim, Dahye Kim, Wonbo Shim, Sungjun Kim, Sungjun Kim
Abstract
In recent years, research on ferroelectric materials based on hafnium oxide has increased because of promising advantages such as fast operating speeds and CMOS process compatibility.
Topics & Concepts
Materials scienceNeuromorphic engineeringFerroelectricityOptoelectronicsOxideCompatibility (geochemistry)HafniumLayer (electronics)Engineering physicsNanotechnologyComposite materialDielectricComputer scienceMetallurgyEngineeringZirconiumArtificial neural networkMachine learningFerroelectric and Negative Capacitance DevicesAdvanced Memory and Neural ComputingSemiconductor materials and devices