Magnetoelectric coupling effects on the band alignments of multiferroic In<sub>2</sub>Se<sub>3</sub>–CrI<sub>3</sub> trilayer heterostructures
Xueying Liu, Chenhai Shen, Xueping Li, Tianxing Wang, Mengjie He, Lin Li, Ying Wang, Jingbo Li, Congxin Xia
Abstract
trilayer vdWHs, downward polarization induces the type-III band alignment, which is typical for spin-tunnel transistors. Moreover, nonvolatile ferroelectric polarization and stacking patterns can induce the conversion between a unipolar semiconductor and a bipolar (unipolar) half-metal. These results provide a possible route to realize nanoscale multifunctional spintronic devices based on 2D multiferroic systems.
Topics & Concepts
SpintronicsMaterials scienceStackingFerroelectricityHeterojunctionMultiferroicsPolarization (electrochemistry)Condensed matter physicsCoupling (piping)OptoelectronicsFerromagnetismNuclear magnetic resonancePhysicsChemistryDielectricPhysical chemistryMetallurgy2D Materials and ApplicationsMultiferroics and related materialsPerovskite Materials and Applications