Epitaxial van der Waals contacts of 2D TaSe<sub>2</sub>-WSe<sub>2</sub> metal–semiconductor heterostructures
Peiyu Qiao, Jing Xia, Xuan-Ze Li, Yu‐Ye Li, Jianyu Cao, Zhongshi Zhang, Heng Lu, Qing Meng, Jiangtao Li, Xiangmin Meng
Abstract
. Furthermore, characterization studies using a Kelvin probe force microscope (KPFM) and electrical transport measurements present compelling evidence that the 2D metal-semiconductor heterostructures under investigation can improve the performance of electrical devices. These results bear substantial significance in augmenting the properties of field-effect transistors (FETs), leading to notable improvements in FET mobility and on/off ratio. Our study not only broadens the horizons of direct growth of high-quality 2D metal-semiconductor heterostructures but also sheds light on potential applications in future high-performance integrated circuits.