Parameter Extraction Methods for Assessing Device-to-Device and Cycle-to-Cycle Variability of Memristive Devices at Wafer Scale
Eduardo Pérez, D. Maldonado, Emilio Pérez-Bosch Quesada, Mamathamba Kalishettyhalli Mahadevaiah, F. Jiménez-Molinos, Christian Wenger, J.B. Roldán
Abstract
The stochastic nature of the resistive switching (RS) process in memristive devices makes device-to-device (DTD) and cycle-to-cycle (CTC) variabilities relevant magnitudes to be quantified and modeled. To accomplish this aim, robust and reliable parameter extraction methods must be employed. In this work, four different extraction methods were used at the production level (over all the 108 devices integrated on 200-mm wafers manufactured in the IHP 130-nm CMOS technology) in order to obtain the corresponding collection of forming, reset, and set switching voltages. The statistical analysis of the experimental data (mean and standard deviation (SD) values) was plotted by using heat maps, which provide a good summary of the whole data at a glance and, in addition, an easy manner to detect inhomogeneities in the fabrication process.