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InSb/Si Heterojunction-Based Tunnelling Field-Effect Transistor with Enhanced Drive Current and Steep Switching

Sukanta Kumar Swain, Nishit Malviya, Sangeeta Singh, Shashi Kant Sharma

2021Journal of Electronic Materials14 citationsDOI

Topics & Concepts

Ambipolar diffusionQuantum tunnellingHeterojunctionSubthreshold swingOptoelectronicsMaterials scienceTunnel field-effect transistorField-effect transistorTransistorSwingDrain-induced barrier loweringElectric fieldIonSubthreshold slopeElectrical engineeringVoltagePhysicsEngineeringPlasmaAcousticsQuantum mechanicsAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devicesNanowire Synthesis and Applications
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