Tungsten-doped Ge2Sb2Te5 phase change material for high-speed optical switching devices
Pengfei Guo, Joshua A. Burrow, Gary A. Sevison, Heungdong Kwon, Christopher Perez, Joshua R. Hendrickson, Evan M. Smith, Mehdi Asheghi, Kenneth E. Goodson, Imad Agha, Andrew Sarangan
Abstract
The large impedance mismatch between the highly resistive amorphous state and the highly conductive crystalline state of Ge2Sb2Te5 is an impediment for the realization of high-speed electrically switched optical devices. In this paper, we demonstrate that tungsten doping can reduce this resistivity contrast and also results in a lower amorphous state resistivity. Additionally, it lowers the contact resistance, improves the optical contrast, and extends the face-centered-cubic state up to 350 °C, with a minimal impact on thermal conductivity.
Topics & Concepts
Amorphous solidMaterials scienceTungstenElectrical resistivity and conductivityDopingOptoelectronicsResistive touchscreenThermal conductivityElectrical conductorThermal conductionPhase (matter)Realization (probability)Composite materialElectrical engineeringMetallurgyCrystallographyChemistryEngineeringOrganic chemistryMathematicsStatisticsPhase-change materials and chalcogenidesGlass properties and applicationsNonlinear Optical Materials Studies