Wafer-Scale Production of Two-Dimensional Tin Monoselenide: Expandable Synthetic Platform for van der Waals Semiconductor-Based Broadband Photodetectors
Hyeong‐ku Jo, Jahee Kim, Yi Rang Lim, Sunyoung Shin, Da Som Song, Garam Bae, Yeong Min Kwon, Moonjeong Jang, Soonmin Yim, Sung Myung, Sun Sook Lee, Chang Gyoun Kim, Ki Kang Kim, Jongsun Lim, Wooseok Song
Abstract
A synthetic platform for industrially applicable two-dimensional (2D) semiconductors that addresses the paramount issues associated with large-scale production, wide-range photosensitive materials, and oxidative stability has not yet been developed. In this study, we attained the 6 in. scale production of 2D SnSe semiconductors with spatial homogeneity using a rational synthetic platform based on the thermal decomposition of solution-processed single-source precursors. The long-range structural and chemical homogeneities of the 2D SnSe layers are manifested using comprehensive spectroscopic analyses. Furthermore, the capability of the SnSe-based photodetectors for broadband photodetection is distinctly verified. The photoresponsivity and detectivity of the SnSe-based photodetectors are 5.89 A W –1 and 1.8 × 10 11 Jones at 532 nm, 1.2 A W –1 and 3.7 × 10 10 Jones at 1064 nm, and 0.14 A W –1 and 4.3 × 10 9 Jones at 1550 nm, respectively. The minimum rise times for the 532 and 1064 nm lasers are 62 and 374 μs, respectively. The photoelectrical analysis of the 5 × 5 SnSe-based photodetector array reveals 100% active devices with 95.06% photocurrent uniformity. We unequivocally validated that the air and thermal stabilities of the photocurrent yielded from the SnSe-based photodetector are determined to be >30 d in air and 160 °C, respectively, which are suitable for optoelectronic applications.