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Flower-like morphological trigonal tellurium (t-te): A simple Wet-Chemical preparation approach to obtain semiconducting material

Aarti Saini, Kisturi Dhanwant, Khemchand Dewangan, Ramalingam Thirumoorthi, Adhish Jaiswal, Indra Bahadur, Faruq Mohammad, Ahmed A. Soleiman

2023Results in Materials12 citationsDOIOpen Access PDF

Abstract

Flower-like microstructured trigonal tellurium ( t -Te) was prepared by a simple solution-based strategy with the reaction of 1,2,3,4,5-pentamethylcyclopentadiene (HCp*) and TeCl 4 in tetrahydrofuran (THF) under reflux condition. Powder X-ray diffraction (XRD) and electron microscopy techniques confirmed the phase purity and morphology of the synthesized sample. X-ray photoelectron spectroscopy (XPS) analysis provides evidence for forming elemental Te, viz, Te (0). Also, XPS analysis indicates the presence of a higher oxidation state, i.e., Te(IV), which may be due to the formation of an ultrathin layer of TeO 2 on the surface of the elemental t -Te microstructure. According to the synthetic strategy, higher oxidation is due to the surface oxidation of Te (0) to Te(IV) while washing the sample. Additionally, Fourier-transform infrared (FTIR) technique further supports the presence of Te–O bonds on the surface of t -Te. The semiconducting behavior of the prepared elemental t -Te microstructure was confirmed by obtaining a positive Hall coefficient ( R H ) value of 4.98 × 10 3 cm 3 C −1 . In addition, the resistivity (conductivity) value, i.e., 1.05 × 10 2 Ω cm (9.52 × 10 −4 Ω −1 cm −1 ) is calculated using Hall-effect measurement.

Topics & Concepts

TelluriumTrigonal crystal systemSimple (philosophy)Materials scienceCrystallographyMineralogyNanotechnologyChemistryMetallurgyCrystal structurePhilosophyEpistemologyChalcogenide Semiconductor Thin FilmsAdvanced Thermoelectric Materials and DevicesAdvanced Semiconductor Detectors and Materials