Gaptronics: multilevel photonics applications spanning zero‐nanometer limits
Jeeyoon Jeong, Hyun Woo Kim, Dai‐Sik Kim
Abstract
With recent advances in nanofabrication technology, various metallic gap structures with gap widths reaching a few to sub-nanometer, and even 'zero-nanometer', have been realized. At such regime, metallic gaps not only exhibit strong electromagnetic field confinement and enhancement, but also incorporate various quantum phenomena in a macroscopic scale, finding applications in ultrasensitive detection using nanosystems, enhancement of light-matter interactions in low-dimensional materials, and ultralow-power manipulation of electromagnetic waves, etc. Therefore, moving beyond nanometer to 'zero-nanometer' can greatly diversify applications of metallic gaps and may open the field of dynamic 'gaptronics.' In this paper, an overview is given on wafer-scale metallic gap structures down to zero-nanometer gap width limit. Theoretical description of metallic gaps from sub-10 to zero-nanometer limit, various wafer-scale fabrication methods and their applications are presented. With such versatility and broadband applicability spanning visible to terahertz and even microwaves, the field of 'gaptronics' can be a central building block for photochemistry, quantum optical devices, and 5/6G communications.