Voltage-controlled skyrmion-based nanodevices for neuromorphic computing using a synthetic antiferromagnet
Ziyang Yu, Maokang Shen, Zhongming Zeng, Shiheng Liang, Yong Liu, Ming Chen, Zhenhua Zhang, Zhihong Lu, Long You, Xiaofei Yang, Yue Zhang, Rui Xiong
Abstract
). Applying a weak electric field on the heterostructure, interlayer antiferromagnetic coupling can be manipulated, giving rise to a continuous transition between a large skyrmion bubble and a small skyrmion. This thus induces a variation of the resistance of a magnetic tunneling junction that can mimic the potentiation/depression of a synapse and the leaky-integral-and-fire function of a neuron at a cost of a very low energy consumption of 0.3 fJ. These results pave a way to ultralow power neuromorphic computing applications.
Topics & Concepts
Neuromorphic engineeringSkyrmionSpintronicsDissipationPhysicsCondensed matter physicsPMOS logicOptoelectronicsVoltageTransistorComputer scienceArtificial neural networkQuantum mechanicsFerromagnetismMachine learningAdvanced Memory and Neural ComputingMagnetic properties of thin filmsFerroelectric and Negative Capacitance Devices