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Thermodynamic Analysis of Dissolved Oxygen in a Silicon Melt and the Effect of Processing Parameters on the Oxygen Distribution in Single-crystal Silicon During Czochralski Growth

Tai Li, Liang Zhao, Guoqiang Lv, Wenhui Ma, Mengyu Zhang, Zhenling Huang, Liang Zhao

2022Silicon19 citationsDOI

Topics & Concepts

SiliconCrucible (geodemography)Materials scienceOxygenImpurityCrystal (programming language)Micro-pulling-downLimiting oxygen concentrationPartial pressureSingle crystalCrystal growthAnalytical Chemistry (journal)CrystallographyMetallurgyChemistryChromatographyOrganic chemistryComputer scienceProgramming languageComputational chemistrySilicon and Solar Cell TechnologiesAdvanced Surface Polishing TechniquesThin-Film Transistor Technologies
Thermodynamic Analysis of Dissolved Oxygen in a Silicon Melt and the Effect of Processing Parameters on the Oxygen Distribution in Single-crystal Silicon During Czochralski Growth | Litcius