Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films with improved endurance obtained through low temperature epitaxial growth on seed layers
Tingfeng Song, Romain Bachelet, Guillaume Saint‐Girons, Ignasi Fina, F. Sánchez
Abstract
at a lower temperature. The threshold temperature for epitaxy is reduced from about 750 °C to about 550 °C using a seed layer. Epitaxial films deposited at low temperatures exhibit highly enhanced endurance, and films grown at 550-600 °C show high polarization, no wake-up effect, and greatly reduced fatigue and improved endurance in comparison with the films deposited at high temperatures without a seed layer. We propose that the endurance enhancement is due to a positive effect of the defects, which limits the propagation of pinned ferroelectric domains.
Topics & Concepts
Materials scienceEpitaxyFerroelectricityAnalytical Chemistry (journal)OptoelectronicsComposite materialLayer (electronics)ChemistryDielectricChromatographyFerroelectric and Negative Capacitance DevicesSemiconductor materials and devicesMXene and MAX Phase Materials