Active-matrix micro-light-emitting diode displays driven by monolithically integrated dual-gate oxide thin-film transistors
Junghoon Yang, Hyunwoo Park, Baul Kim, Yong‐Hoon Cho, Sang‐Hee Ko Park
Abstract
We present the first monolithic fabrication of a-IGZO TFTs on a GaN-based micro-LED array at a low temperature to overcome the weak thermal endurance constraint of the organic planarization layer for high resolution and stable low-cost LED displays.
Topics & Concepts
Materials scienceOptoelectronicsChemical-mechanical planarizationActive matrixFabricationDiodeOxideLayer (electronics)Thin-film transistorLight-emitting diodeTransistorNanotechnologyElectrical engineeringAlternative medicineMedicineVoltagePathologyEngineeringMetallurgyThin-Film Transistor TechnologiesZnO doping and propertiesGaN-based semiconductor devices and materials