Oxygen Vacancy Induced 2D Bi<sub>2</sub>SeO<sub>5</sub> Non-Volatile Memristor for 1T1R Integration
Tingting Guo, Zhidong Pan, Yehui Shen, Jialin Yang, Chuyao Chen, Yunhai Xiong, Xuan Chen, Yang Song, Nengjie Huo, Rongqing Xu, Gangyi Zhu, Guangxu Shen, Xiang Chen, Shengli Zhang, Xiufeng Song, Haibo Zeng
Abstract
Two-dimensional (2D) layered Bi 2 SeO 5, a novel high-k oxide material, has shown considerable potential for enhancing memristor performance. In this study, high-crystallinity 2D Bi 2 SeO 5 nanosheets were successfully exfoliated, demonstrating that oxygen-vacancy-induced Bi 2 SeO 5 memristors exhibit superior nonvolatile characteristics. Specifically, these memristors exhibit an ultrahigh on/off ratio (up to 10 10 ), an extremely low off-state current (10 –12 A), and rapid switching speeds (160 ns for SET and 110 ns for RESET). Moreover, the memristor demonstrates excellent retention and endurance capabilities. Additionally, by integrating SnS 2 transistors, a 1T1R (one transistor and one resistor) structure was constructed, which simplifies circuit design and enables AND gate logic and multivalue logic storage functions. This work establishes a solid foundation for the practical application of 2D high-performance oxide memristors in future high-density-integration and fast in-memory computing systems.