7-Levels-Stacked Nanosheet GAA Transistors for High Performance Computing
Sylvain Barraud, B. Prévitali, C. Vizioz, Jean‐Michel Hartmann, J. A. Sturm, J. Lassarre, C. Perrot, Ph. Rodriguez, V. Loup, A. Magalhaes-Lucas, R. Kies, G. Romano, M. Cassé, Nicolas Bernier, Audrey Jannaud, Adeline Grenier, F. Andrieu
Abstract
In this paper, we experimentally demonstrate, for the first time, gate-all-around (GAA) nanosheet transistors with a record number of stacked channels. Seven levels stacked nanosheet (NS) GAA transistors fabricated using a replacement metal gate process, inner spacer and self-aligned contacts show an excellent gate controllability with extremely high current drivability (3mA/μm at V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DD</sub> =1V) and a 3× improvement in drain current over usual 2 levels stacked- NS GAA transistors.