Interfacial engineering of a Mo/Hf<sub>0.3</sub>Zr<sub>0.7</sub>O<sub>2</sub>/Si capacitor using the direct scavenging effect of a thin Ti layer
Se Hyun Kim, Geun Taek Yu, Geun Hyeong Park, Dong Hyun Lee, Ju Yong Park, Kun Yang, Eun Been Lee, Je In Lee, Min Hyuk Park
Abstract
The endurance of a Mo/Hf 0.3 Zr 0.7 O 2 /Si capacitor was improved up to 10 9 cycles by using a Ti layer formed prior to the atomic layer deposition of a Hf 0.3 Zr 0.7 O 2 film to avoid direct exposure of Si to ozone with resulting trap density decrease.
Topics & Concepts
Materials scienceCapacitorLayer (electronics)Stack (abstract data type)FerroelectricityTransistorTrappingField-effect transistorOptoelectronicsDielectricNanotechnologyElectrical engineeringVoltageBiologyEngineeringProgramming languageComputer scienceEcologyFerroelectric and Negative Capacitance DevicesMXene and MAX Phase MaterialsSemiconductor materials and devices