Fast Read-After-Write and Depolarization Fields in High Endurance n-Type Ferroelectric FETs
Michael Hoffmann, Ava J. Tan, Nirmaan Shanker, Yu-Hung Liao, Li‐Chen Wang, Jong‐Ho Bae, Chenming Hu, Sayeef Salahuddin
Abstract
Ferroelectric field-effect transistors (FeFETs) based on HfO<sub>2</sub> are promising for low-power and high-speed non-volatile memory devices. However, most reported FeFETs show limited write endurance and significant read-after-write delay due to parasitic charge trapping. Here we show that n-type FeFETs with SiN<sub><i>x</i></sub> interfacial layer and high write endurance also exhibit immediate read-after-write behavior due to negligible charge trapping. This overcomes one of the major challenges faced by FeFET technologies today.
Topics & Concepts
FerroelectricityOptoelectronicsMaterials scienceTransistorField-effect transistorElectrical engineeringCharge (physics)TrappingLayer (electronics)Power (physics)Engineering physicsNanotechnologyPhysicsEngineeringVoltageDielectricBiologyQuantum mechanicsEcologyFerroelectric and Negative Capacitance DevicesMXene and MAX Phase MaterialsSemiconductor materials and devices