Different temperature dependence of mobility in n- and p-channel 4H-SiC MOSFETs
Xilun Chi, Keita Tachiki, Kyota Mikami, Mitsuaki Kaneko, Tsunenobu Kimoto
Abstract
Abstract The impact of interface state density ( D it ) near the conduction band edge ( E C ) and the VB edge ( E V ) on the field-effect mobility ( μ FE ) of NO- and N 2 -annealed n- and p-channel MOSFETs was investigated. With lowering the temperature, μ FE of n-channel MOSFETs decreased whereas μ FE increased in p-channel devices. Despite the comparable D it values near E C and E V , p-channel MOSFETs have less trapped carriers due to a deeper surface Fermi level caused by the larger effective masses of holes, resulting in smaller Coulomb scattering, and this may cause the different temperature dependence of μ FE in n- and p-channel MOSFETs.
Topics & Concepts
Conduction bandCondensed matter physicsMaterials scienceMOSFETEnhanced Data Rates for GSM EvolutionCoulombScatteringElectron mobilityChannel (broadcasting)Fermi levelOptoelectronicsPhysicsElectrical engineeringTransistorElectronOpticsVoltageTelecommunicationsComputer scienceEngineeringQuantum mechanicsSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesSemiconductor materials and interfaces