Resistive switching and synaptic behaviors of an HfO2/Al2O3 stack on ITO for neuromorphic systems
Chandreswar Mahata, Changmin Lee, Youngseo An, Min‐Hwi Kim, Suhyun Bang, Chae Soo Kim, Jiho Ryu, Sungjun Kim, Hyoungsub Kim, Byung‐Gook Park
Topics & Concepts
Neuromorphic engineeringMaterials scienceIndium tin oxideOptoelectronicsBilayerStack (abstract data type)MemristorResistive random-access memoryElectrodeLayer (electronics)VoltageNanotechnologyElectronic engineeringComputer scienceElectrical engineeringChemistryBiochemistryEngineeringPhysical chemistryArtificial neural networkMachine learningMembraneProgramming languageAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesNeuroscience and Neural Engineering