Failure Mechanisms of Cu–Cu Bumps under Thermal Cycling
Kai-Cheng Shie, Po-Ning Hsu, Yu-Jin Li, Dinh-Phuc Tran, Chih Chen
Abstract
The failure mechanisms of Cu-Cu bumps under thermal cycling test (TCT) were investigated. The resistance change of Cu-Cu bumps in chip corners was less than 20% after 1000 thermal cycles. Many cracks were found at the center of the bonding interface, assumed to be a result of weak grain boundaries. Finite element analysis (FEA) was performed to simulate the stress distribution under thermal cycling. The results show that the maximum stress was located close to the Cu redistribution lines (RDLs). With the TiW adhesion layer between the Cu-Cu bumps and RDLs, the bonding strength was strong enough to sustain the thermal stress. Additionally, the middle of the Cu-Cu bumps was subjected to tension. Some triple junctions with zig-zag grain boundaries after TCT were observed. From the pre-existing tiny voids at the bonding interface, cracks might initiate and propagate along the weak bonding interface. In order to avoid such failures, a postannealing bonding process was adopted to completely eliminate the bonding interface of Cu-Cu bumps. This study delivers a deep understanding of the thermal cycling reliability of Cu-Cu hybrid joints.