Charge transfer enabled by the p-doping of WSe <sub>2</sub> for 2D material-based printable electronics
Taoyu Zou, Haksoon Jung, Ao Liu, Soonhyo Kim, Youjin Reo, Taesu Choi, Yong‐Young Noh
Abstract
Here, we report the fabrication of high-performance printable WSe2 transistors via the doping of p-type FeCl3 molecules (hole mobility: ∼1.5 cm2 V−1 s−1; on/off ratio: ∼106). A complementary inverter is demonstrated with p-WSe2 and n-MoS2 transistors, which highlights its potential for application in future two-dimensional material-based printable electronics.
Topics & Concepts
Materials scienceElectronicsTransistorDopingFabricationOptoelectronicsThin-film transistorNanotechnologyElectron mobilityInverterCharge (physics)Electrical engineeringVoltagePhysicsEngineeringMedicinePathologyLayer (electronics)Quantum mechanicsAlternative medicine2D Materials and ApplicationsMXene and MAX Phase MaterialsPerovskite Materials and Applications