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Adsorption Mechanism and Electronic Characteristics of TiO<sub>2</sub> and (TiO<sub>2</sub>)<sub>2</sub> Nanoparticles Doped GaNNT for SOF<sub>2</sub>, SO<sub>2</sub>F<sub>2</sub>, and SO<sub>2</sub> Detection and Scavenging

Tianyi Sang, Tao Li, Yihao Yang, Xiqian Hu, Ziyi Wang, Yang Zhuang, Xinyuan Zhang, Yuxuan Song, Changding Wang, Weigen Chen

2023IEEE Transactions on Dielectrics and Electrical Insulation11 citationsDOI

Abstract

Insulation faults in sulfur hexafluoride (SF6-based high-voltage insulation equipment are accompanied by SF6 decomposition; hence, electrical equipment insulation condition monitoring is vital. The first principles calculations are used to investigate the adsorption and electronic characteristics of titanium dioxide (TiO <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{{2}}{)}$ </tex-math></inline-formula> -gallium nitride nanotube (GaNNT) and (TiO <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{{2}}{)}_{{2}}$ </tex-math></inline-formula> -GaNNT. TiO2 and (TiO <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{{2}}{)}_{{2}}$ </tex-math></inline-formula> are first applied for the adsorption of SF6 decomposition species (SO2F2, SOF2, and SO <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{{2}}{)}$ </tex-math></inline-formula> with the most stable structures binding energies of −10.077 and −10.663 eV, respectively. Through comparing the adsorption energy and electronic characteristics of SO2F2, SOF2, and SO2 on TiO2-GaNNT and (TiO <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{{2}}{)}_{{2}}$ </tex-math></inline-formula> -GaNNT, these results indicate that TiO2-GaNNT and (TiO <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{{2}}{)}_{{2}}$ </tex-math></inline-formula> -GaNNT are appropriate sensing materials for SF6 decomposition products. Furthermore, (TiO <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{{2}}{)}_{{2}}$ </tex-math></inline-formula> -GaNNT has good desorption recovery time (1.527 s) for SOF2 at a specific temperature, and the mode of physical adsorption offers a prominent basis for its desorption as a gas sensor. The results demonstrate that TiO2 and (TiO <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{{2}}{)}_{{2}}$ </tex-math></inline-formula> can be employed as a novel gas sensitive material for SF6 decomposition species detection, scavenging, and diagnosis in the insulation faults of SF6-based electrical equipment.

Topics & Concepts

AdsorptionMaterials sciencePhysicsAlgorithmPhysical chemistryMathematicsChemistryGaN-based semiconductor devices and materialsGa2O3 and related materialsSemiconductor materials and devices