Fabrication and Modeling of Flexible High-Performance Resistive Switching Devices With Biomaterial Gelatin/Ultrathin HfOx Hybrid Bilayer
Anurag Dwivedi, Anil Lodhi, Shalu Saini, Harshit Agarwal, Shree Prakash Tiwari
Abstract
Flexible resistive random access memory (RRAM) devices with biomaterial gelatin and ultrathin HfOx hybrid bilayer dielectric exhibiting excellent resistive switching (RS) behavior are demonstrated. The fabricated devices show a very high memory window of greater than <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{{5}}$ </tex-math></inline-formula> and data retention of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{{4}}$ </tex-math></inline-formula> s without any degradation in a pristine state. Moreover, to investigate the mechanical stability of the hybrid bilayer film and variation in switching performance upon bending was studied by bending the devices at a 12-mm radius followed by 7 mm. Even after this extreme bending, the device maintained the memory window of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{{5}}$ </tex-math></inline-formula> without any degradation in data retention, indicating excellent electromechanical stability of the device. Furthermore, a simple mathematical model of the RRAM device was used to simulate these devices with the help of our experimental data and the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}$ </tex-math></inline-formula> – <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}$ </tex-math></inline-formula> equations. The developed model shows excellent accuracy with a relative root mean square (RMS) error of less than 5%, which can prove to be an excellent tool for the simulation of circuits and systems based on these RRAMs.