Heptagons in the Basal Plane of Graphene Nanoflakes Analyzed by Simulated X-ray Photoelectron Spectroscopy
Jungpil Kim, Jang‒Woo Han, Yasuhiro Yamada
Abstract
The performance of graphene-based electronic devices depends critically on the existence of topological defects such as heptagons. Identifying heptagons at the atomic scale is important to completely understand the electronic properties of these materials. In this study, we report an atomic-scale analysis of graphene nanoflakes with two to eight isolated or connected heptagons, using simulated C 1s X-ray photoelectron spectroscopy (XPS) to estimate the XPS profiles depending on the density and the position of the heptagons. The introduction of up to 24% of isolated heptagons shifted the peak position toward high binding energies (284.0 to 284.3 eV), whereas the introduction of up to 39% of connected heptagons shifted the calculated peak position toward low binding energies (284.0 to 283.5 eV). The presence of heptagons also influenced the full width at half-maximum (FWHM). The introduction of 24% of isolated heptagons increased the FWHMs from 1.25 to 1.50 eV. However, the introduction of connected heptagons did not increase the FWHMs above 1.40 eV. The FWHMs increased to 1.40 eV for 19% of connected heptagons, but did not increase further as the percentage of connected heptagons increased to 39%. Based on the calculated results, the XPS profiles of graphene nanoflakes containing heptagons with different densities and positions can be obtained. Our precise identification of heptagons in graphene nanoflakes by XPS lays the groundwork for the analysis of graphene.