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220–325-GHz 25-dB-Gain Differential Amplifier With High Common-Mode-Rejection Circuit in 60-nm InP-HEMT Technology

Hiroshi Hamada, Takuya Tsutsumi, Adam Pander, Hideaki Matsuzaki, Hiroki Sugiyama, Hiroyuki Takahashi, Hideyuki Nosaka

2021IEEE Microwave and Wireless Components Letters21 citationsDOI

Abstract

This letter presents a broadband and high-gain differential amplifier (DA) with a common-mode rejection circuit (CMRC) using 60-nm InP-HEMT technology. The differential pair in the DA is designed with common-source FET amplifiers. The CMRC implemented by short and open stubs with resistor degenerates the common-mode gain of the DA. Rat-race couplers (RRCs) are used as baluns for DA input and output. The fabricated DA chip exhibits superior gain and output power of 25 ± 3.5 dB and >3.5 dBm over the full WR3.4-band (220-325 GHz). Furthermore, the common-mode rejection is experimentally investigated using the common-mode test circuit of the DA. It is suggested that the fabricated DA chip has high common-mode rejection.

Topics & Concepts

Common-mode rejection ratioBalunAmplifierResistorMonolithic microwave integrated circuitHigh-electron-mobility transistorElectrical engineeringCommon-mode signalDifferential amplifierNoise figureFully differential amplifierBroadbandOptoelectronicsMaterials scienceEngineeringElectronic engineeringOperational amplifierCMOSTelecommunicationsTransistorVoltageDigital signal processingAnalog signalAntenna (radio)Radio Frequency Integrated Circuit DesignMicrowave Engineering and WaveguidesPhotonic and Optical Devices
220–325-GHz 25-dB-Gain Differential Amplifier With High Common-Mode-Rejection Circuit in 60-nm InP-HEMT Technology | Litcius