Atomic layer deposition of vanadium oxide films for crystalline silicon solar cells
Eloi Ros, Ivan Masmitjà Rusiñol, Estefania Almache, Benjamín Pusay, Kunal J. Tiwari, Edgardo Saucedo, C. Justin Raj, Byung Chul Kim, Joaquim Puigdollers, Isidro Martín, C. Voz, Pablo Ortega
Abstract
. The strong band bending induced at the c-Si surface was confirmed through capacitance-voltage measurements with a built-in voltage value of 683 mV. Besides low contact resistance, vanadium oxide films provide excellent surface passivation with effective lifetime values of up to 800 μs. Finally, proof-of-concept both-side contacted solar cells exhibit efficiencies beyond 18%, shedding light on the possibilities of TMOs deposited by the atomic layer deposition technique.
Topics & Concepts
Materials scienceAtomic layer depositionLayer (electronics)SiliconDeposition (geology)Vanadium oxideVanadiumCrystalline siliconChemical engineeringOxideMetallurgyNanotechnologyGeologyPaleontologyEngineeringSedimentSilicon and Solar Cell TechnologiesThin-Film Transistor TechnologiesSemiconductor materials and devices