State-of-the-Art Medium- and High-Voltage Silicon Carbide Power Modules, Challenges and Mitigation Techniques: A Review
Yang Li, Mustafeez Ul Hassan, Abdul Basit Mirza, Yang Xie, Shiyue Deng, Sama Salehi Vala, Fang Luo, Xuhui Feng, Sreekant Narumanchi, Jack Flicker
Abstract
Silicon carbide (SiC) power modules have been demonstrated potential for improving power density and efficiency for low-voltage power electronics systems. This has resulted in a paradigm shift toward development of medium-voltage and high-voltage (MV/HV) SiC power modules to revolutionize the future power grid and transportation systems. However, designing MV/HV SiC power modules involves significant design challenges due to higher blocking voltage and exacerbation of side effects due to high switching <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dv/dt</i> and <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">di/dt</i> of SiC devices-concerns that may not be as critical as in low-voltage module development. This article reviews the development of state-of-the-art MV/HV SiC power modules, ranging from 3.3 kV to 40 kV, from both industry and academia. First, a discussion on SiC modules based on voltage level is presented. This is followed by a discussion of challenges associated with designing and testing MV/HV modules- including parasitic controls, electromagnetic interference (EMI), partial discharge, and thermal management-and the corresponding mitigation approaches from various perspectives. We conclude with a summary of major findings and future directions for the development of MV/HV modules.