A Review of Cell Operation Algorithm for 3D NAND Flash Memory
Jong Kyung Park, Sarah Eunkyung Kim
Abstract
The size of the memory market is expected to continue to expand due to the digital transformation triggered by the fourth industrial revolution. Among various types of memory, NAND flash memory has established itself as a major data storage medium based on excellent cell characteristics and manufacturability; as such, the demand for increasing the bit density and the performance has been rapidly increasing. In this paper, we will review the device operation algorithm and techniques to improve the cell characteristics and reliability in terms of optimization of individual program, read and erase operation, and system level performance.
Topics & Concepts
NAND gateComputer scienceDesign for manufacturabilityFlash memorySemiconductor memoryReliability (semiconductor)Computer hardwareAlgorithmLogic gateEngineeringElectrical engineeringPhysicsPower (physics)Quantum mechanicsAdvanced Data Storage TechnologiesCellular Automata and Applications