Bilayer-Based Antiferroelectric HfZrO<sub>2</sub> Tunneling Junction With High Tunneling Electroresistance and Multilevel Nonvolatile Memory
K.-Y. Hsiang, C.-Y. Liao, Jun Liu, J.-F. Wang, S.-H. Chiang, S.-H. Chang, Fan-Chun Hsieh, H. Liang, Chun‐Yu Lin, Zaizhu Lou, Tuo‐Hung Hou, C. W. Liu, M. H. Lee
Abstract
The bilayer-based Antiferroelectric Tunneling Junction (AFTJ) with ferroelectric (FE) HfZrO<sub>2</sub> (HZO) and dielectric (DE) Al<sub>2</sub>O<sub>3</sub> demonstrates a current ratio of <inline-formula> <tex-math notation="LaTeX">$> 100\times $ </tex-math></inline-formula>, a TER (tunneling electroresistance) of <inline-formula> <tex-math notation="LaTeX">$> 50\times $ </tex-math></inline-formula>, multilevel states, <inline-formula> <tex-math notation="LaTeX">$> 10^{4}$ </tex-math></inline-formula> sec retention, and a cycling endurance as high as 10<sup>8</sup>. The concept of tunneling current through DE in an antiferroelectric (AFE) system enhances the capacity to modulate the current/TER ratio and makes the AFTJ feasible for low-power crossbar eNVM (embedded nonvolatile memory) applications.