Enhanced drain current and cut off frequency in AlGaN/GaN HEMT with BGaN back barrier
K. Husna Hamza, D. Nirmal, A.S. Augustine Fletcher, J. Ajayan, Ramkumar Natarajan
Topics & Concepts
High-electron-mobility transistorOptoelectronicsMaterials scienceCurrent (fluid)Gallium nitrideWide-bandgap semiconductorElectrical engineeringTransistorComposite materialLayer (electronics)EngineeringVoltageGaN-based semiconductor devices and materialsSemiconductor materials and devicesSilicon Carbide Semiconductor Technologies