Detecting Induced <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>p</mml:mi><mml:mo>±</mml:mo><mml:mi>i</mml:mi><mml:mi>p</mml:mi></mml:mrow></mml:math> Pairing at the Al-InAs Interface with a Quantum Microwave Circuit
D. Phan, J. Senior, A. Ghazaryan, M. Hatefipour, W. M. Strickland, J. Shabani, M. Serbyn, A. P. Higginbotham
Abstract
Superconductor-semiconductor hybrid devices are at the heart of several proposed approaches to quantum information processing, but their basic properties remain to be understood. We embed a two-dimensional Al-InAs hybrid system in a resonant microwave circuit, probing the breakdown of superconductivity due to an applied magnetic field. We find a fingerprint from the two-component nature of the hybrid system, and quantitatively compare with a theory that includes the contribution of intraband p±ip pairing in the InAs, as well as the emergence of Bogoliubov-Fermi surfaces due to magnetic field. Separately resolving the Al and InAs contributions allows us to determine the carrier density and mobility in the InAs.