High Temperature Robustness of Enhancement-Mode p-GaN-Gated AlGaN/GaN HEMT Technology
Mengyang Yuan, Qingyun Xie, John Niroula, Mohamed Fadil Isamotu, Nitul S. Rajput, Nadim Chowdhury, Tomás Palacios
Abstract
This paper reports on the high temperature (HT) robustness of enhancement-mode (E-mode) p-GaN-gated Al-GaN/GaN high electron mobility transistors (HEMTs), with an emphasis on the key transistor-level parameters for digital and analog mixed-signal applications. In-situ measurements from room temperature (RT) to 500 °C show that trends in V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</inf> , R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf> , I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D,max</inf> and I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G,max</inf> are largely as expected based on first-order changes in the semiconductor properties. The fabricated transistors exhibited stable performance over 20 days at 500 °C. To the best of the authors’ knowledge, this work is the first systematic study on the HT performance of E-mode p-GaN-gated AlGaN/GaN HEMTs, and sheds light on their use in mixed-signal and low-voltage power circuits.