Ultrafast Carrier Dynamics in 2D NbTe<sub>2</sub> Films: Implications for Photonic and Optoelectronic Devices
Linnan Jia, Changfu Huo, Xiao‐Qing Yan, Jiayang Wu, Yuzhe Zhang, Yunyi Yang, Wenxiong Xu, Qiannan Cui, Daohong Song, Baohua Jia, Zhibo Liu, Zhigang Chen, David Moss
Abstract
As one of the representatives of emerging metallic transition-metal dichalcogenides, niobium ditelluride (NbTe2) has attracted intensive interest recently due to its distorted lattice structure and unique physical properties. Here, we report on the ultrafast carrier dynamics in NbTe2 measured using time-resolved pump–probe transient reflection spectroscopy. A thickness-dependent carrier relaxation time is observed, exhibiting a clear increase in the fast and slow carrier decay rates for thin NbTe2 flakes. In addition, pump-power-dependent measurements indicate that the carrier relaxation rates are power-independent and the peak amplitude of the transient reflectivity increases linearly with the pump power. The isotropic relaxation dynamics in NbTe2 is also verified by performing polarization-resolved pump–probe measurements. These results provide insight into the light–matter interactions and charge-carrier dynamics in NbTe2 and will pave the way for its applications to photonic and optoelectronic devices.