7‐4: High Mobility Hydrogenated Polycrystalline In‐Ga‐O (IGO:H) Thin‐Film Transistors formed by Solid Phase Crystallization
Mamoru Furuta, Kenta Shimpo, Taiki Kataoka, Daiki Tanaka, Toshihiro Matsumura, Yusaku Magari, Rostislav Velichko, Daichi Sasaki, Emi Kawashima, Yuki Tsuruma
Abstract
Hydrogenated polycrystalline In‐Ga‐O (IGO:H) thin‐film transistor (TFT) was demonstrated by low‐temperature solid phase crystallization (SPC). The amorphous IGO:H was deposited by H 2 doping during RF magnetron sputtering in Ar and O 2 atmosphere. An intentionally doped H 2 in IGO:H film suppressed the crystallization during the film deposition. The amorphous IGO:H film could be converted into the poly‐IGO:H film by SPC below 250 °C. A maximum field effect mobility of 50.6 cm 2 /Vs was obtained from the SPC poly‐IGO:H TFT. The polycrystalline oxide semiconductors (OSs) are simple and cost‐effective approach to achieve high‐performance OS TFTs for future displays.