Irradiation effects of X-rays up to 3 MGy on hydrogen-terminated diamond MOSFETs
Tadashi Masumura, Hitoshi Umezawa, Takahiro Yamaguchi, Yusei Deguchi, Hiroyuki Kawashima, Toshiharu Makino, Naohisa Hoshikawa, Hitoshi Koizumi, Junichi H. Kaneko
Topics & Concepts
PassivationIrradiationHydrogenDiamondSheet resistanceConductivityMaterials scienceAnalytical Chemistry (journal)Threshold voltageElectrodeLayer (electronics)ChemistryVoltageNanotechnologyComposite materialElectrical engineeringTransistorEngineeringOrganic chemistryChromatographyPhysicsPhysical chemistryNuclear physicsSemiconductor materials and devicesDiamond and Carbon-based Materials ResearchAdvancements in Semiconductor Devices and Circuit Design