Numerical Expedition on the Potential of AgBiS<sub>2</sub>-Based Thin Film Solar Cells Employing Different Carrier Transport Layers
Sabbir Ahmed Sayeem, Mst. Aysha Siddika, Sangita Rani Basu, Bipanko Kumar Mondal, Jaker Hossain
Abstract
High Resolution Image Download MS PowerPoint Slide In this study, a photovoltaic (PV) device has been developed by using AgBiS 2 as the key material. The simulation of the photovoltaic cell has been performed using the SCAPS-1D simulator to analyze the impact of each layer. The design incorporates three window layers, CdS, In 2 S 3, and ZnSe, alongside six familiar compounds, AlSb, CuGaSe 2 (CGS), CuS, MoS 2, Sb 2 S 3, and WSe 2, as the back surface field (BSF) layers. These heterostructures aim to uncover the potential of AgBiS 2 in the realm of photovoltaic technology. When AgBiS 2 functions within a singular heterojunction, specifically in configurations such as n-CdS/p-AgBiS 2, n-In 2 S 3 /p-AgBiS 2, and n-ZnSe/p-AgBiS 2, the resulting values for open-circuit voltage ( V OC ) and the short circuit current ( J SC ) are found to be ∼0.90 V and ∼32 mA/cm 2, respectively, while the corresponding power conversion efficiencies (PCE) are 23.56%, 22.60%, and 23.62%, respectively. On the contrary, the incorporation of various BSF layers like AlSb, CGS, CuS, MoS 2, Sb 2 S 3, and WSe 2 results in a substantial increase in V OC, leading to an enhancement in PCE. Among the AgBiS 2 based different dual-heterostructures, the outstanding PCE of 30.04% with a V OC of 1.12 V is achieved by n-ZnSe/p-AgBiS 2 /p + -Sb 2 S 3 device. In comparison, the n-ZnSe/p-AgBiS 2 /p + -CGS structure exhibits a similar PCE of 30.03% with a V OC of 1.12 V. Additionally, the n-ZnSe/p-AgBiS 2 /p + -MoS 2 arrangement demonstrates a PCE of 29.95% and a V OC of 1.12 V. The effective band alignments observed at the interfaces of ZnSe/AgBiS 2 and AgBiS 2 /MoS 2, ZnSe/AgBiS 2 and AgBiS 2 /CGS, as well as ZnSe/AgBiS 2 and AgBiS 2 /Sb 2 S 3 contribute to a substantial built-in potential, leading to an elevated V OC . As an alternative to ZnSe, the CdS window could offer similar performances, whereas In 2 S 3 might provide a lower efficiency. The elaborate simulation findings highlight the substantial potential of AgBiS 2 as an absorber, particularly when coupled with different windows and BSF layers. This opens avenues for experimental research focused on AgBiS 2 in the era of photovoltaic cells.