Anti-ambipolar behavior and photovoltaic effect in p-MoTe<sub>2</sub>/n-InSe heterojunctions
Yiming Sun, Wei Gao, Xueping Li, Congxin Xia, Hongyu Chen, Li Zhang, Dongxiang Luo, W. J. Fan, Nengjie Huo, Jingbo Li
Abstract
The MoTe 2 /InSe heterojunctions exhibit an anti-ambipolar behavior with high peak-to-valley current ratio (>10 3 ) and a high self-driven photodetection performance with photoresponsivity of 15.4 mA W −1 and specific detectivity up to ∼3.02 × 10 14 Jones.
Topics & Concepts
Ambipolar diffusionHeterojunctionPhotodetectionMaterials scienceOptoelectronicsPhotovoltaic systemPhotodetectorElectronPhysicsElectrical engineeringQuantum mechanicsEngineering2D Materials and ApplicationsPerovskite Materials and ApplicationsMXene and MAX Phase Materials