Gradual conductance modulation by defect reorganization in amorphous oxide memristors
Siqin Li, Jigang Du, Bojing Lu, Ruqi Yang, Dunan Hu, Pingwei Liu, Haiqing Li, Jingsheng Bai, Zhizhen Ye, Jianguo Lü
Abstract
TEM. Especially, the conductance of the filament, including the remnant filament, is larger than that of the hopping conductive channel derived from the diffusion of oxygen vacancies. The Fermi level in the conduction band rationalizes the decay of the high resistance state. Rare oxidation-migration of Au occurs upon device failure, resulting in numerous gold nanoclusters in the functional layer. These comprehensive revelations on the reorganization of oxygen vacancies could provide original ideas for the design of memristors.
Topics & Concepts
MemristorConductanceMaterials scienceAmorphous solidRelaxation (psychology)OxideModulation (music)Electrical conductorCondensed matter physicsChemical physicsOxygenDiffusionElectrical resistivity and conductivityNanotechnologyOptoelectronicsCrystallographyChemistryPhysicsComposite materialThermodynamicsMetallurgyQuantum mechanicsSocial psychologyAcousticsOrganic chemistryPsychologyAdvanced Memory and Neural ComputingNeuroscience and Neural EngineeringTransition Metal Oxide Nanomaterials