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Effect of illumination intensity on the electrical characteristics of Au//SiO2/n-type Si structures with GO and P3C4MT interface layer

Halil Seymen, Niyazi Berk, İkram Orak, Şükrü Karataş

2022Journal of Materials Science Materials in Electronics20 citationsDOIOpen Access PDF

Topics & Concepts

Thermionic emissionEquivalent series resistanceMaterials scienceDark currentAnalytical Chemistry (journal)Intensity (physics)Saturation (graph theory)ChemistryOptoelectronicsElectronPhotodetectorVoltageOpticsPhysicsMathematicsQuantum mechanicsChromatographyCombinatoricsSemiconductor materials and interfacesSilicon Nanostructures and PhotoluminescenceNanowire Synthesis and Applications
Effect of illumination intensity on the electrical characteristics of Au//SiO2/n-type Si structures with GO and P3C4MT interface layer | Litcius