High-Performance Two-Dimensional Electronics with a Noncontact Remote Doping Method
Po‐Hsun Ho, Ren‐Hao Cheng, Po-Heng Pao, Sui-An Chou, Yi-Hsiu Huang, Yuying Yang, Yu-Syuan Wu, Yuan-Chun Su, Po‐Sen Mao, Sheng‐Kai Su, Bo-Jhih Chou, Edward Chen, Terry Y.T. Hung, Ming‐Yang Li, Chao-Ching Cheng, Wei-Yen Woon, Szuya Sandy Liao, Wen‐Hao Chang, Chao-Hsin Chien
Abstract
Because of the intrinsic low carrier density of monolayer two-dimensional (2D) materials, doping is crucial for the performance of underlap top-gated 2D devices. However, wet etching of a high- k (dielectric constant) dielectric layer is difficult to implement without causing performance deterioration on the devices; therefore, finding a suitable spacer doping technique for 2D devices is indispensable. In this study, we developed a remote doping (RD) method in which defective SiO x can remotely dope the underlying high- k capped 2D regions without directly contacting these materials. This method achieved a doping density as high as 1.4 × 10 13 cm –2 without reducing the mobility of the doped materials; after 1 month, the doping concentration remained as high as 1.2 × 10 13 cm –2 . Defective SiO x can be used to dope most popular 2D transition-metal dichalcogenides. The low- k properties of SiO x render it ideal for spacer doping, which is very attractive from the perspective of circuit operation. In our experiments, MoS 2 and WS 2 underlap top-gate devices exhibited 10× and 200× increases in their on-currents, respectively, after being doped with SiO x . These results indicate that SiO x doping can be conducted to manufacture high-performance 2D devices.