Litcius/Paper detail

Effect of Single Spinel Phase Crystallization on Drain-Induced-Barrier-Lowering in Submicron Length IZTO Thin-Film Transistors

Gwang‐Bok Kim, Taikyu Kim, Cheol Hee Choi, Sang Won Chung, Jae Kyeong Jeong

2023IEEE Electron Device Letters13 citationsDOI

Abstract

This study shows the effect of single spinel phase crystallization on drain-induced barrier lowering (DIBL) of indium-zinc-tin-oxide (IZTO) thin-film transistors (TFTs) with submicron channel length. The 0.9- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> -long amorphous IZTO (a-IZTO) TFT shows a poor DIBL of 318 mV/V. In contrast, a significant improvement in the DIBL is achieved in the single spinel phase IZTO (s-IZTO) TFT, which could be attributed to the suppression of lateral diffusion of oxygen vacancy ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{V}_{\text {O}}{)}$ </tex-math></inline-formula> and low V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">O</sub> defects through crystallization-induced enforcement of metal-oxygen bonds. Consequently, 0.9- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> -long s-IZTO TFT reveals a small DIBL of 92 mV/V as well as a high field-effect mobility of 90.1 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vs and a low subthreshold swing of 0.1 V/dec. In addition, reliability against external bias temperature stress is considerably improved through single-phase crystallization, leading to an insignificant threshold voltage shift of +0.4 (−0.4) V under positive (negative) bias stress with electric field of 2 (−2) MV/cm at 60 °C for 10,000 s, respectively, in the 0.9- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> -long s-IZTO TFT.

Topics & Concepts

CrystallizationThin-film transistorMaterials sciencePhase (matter)SpinelPhysicsAnalytical Chemistry (journal)NanotechnologyChemistryQuantum mechanicsOrganic chemistryThermodynamicsMetallurgyLayer (electronics)Thin-Film Transistor TechnologiesSemiconductor materials and devicesZnO doping and properties
Effect of Single Spinel Phase Crystallization on Drain-Induced-Barrier-Lowering in Submicron Length IZTO Thin-Film Transistors | Litcius