Self-Powered, Broadband Photodetector Based on Two-Dimensional Tellurium-Silicon Heterojunction
Amirhossein Hasani, Mohammad Reza Mohammadzadeh, Hamidreza Ghanbari, Mirette Fawzy, Thushani De Silva, Amin Abnavi, Ribwar Ahmadi, Abdelrahman M. Askar, Fahmid Kabir, R. K. N. D. Rajapakse, Michael M. Adachi
Abstract
As a new class of two-dimensional (2D) materials and a group-VI chalcogen, tellurium (Te) has emerged as a p-type semiconductor with high carrier mobility. Potential applications include high-speed opto-electronic devices for communication. One method to enhance the performance of 2D material-based photodetectors is by integration with a IV group of semiconductors such as silicon (Si). In this work, we demonstrate a self-powered, high-speed, broadband photodetector based on the 2D Te/n-type Si heterojunction. The fabricated Te/n-type Si heterojunction exhibits high performance in the UV–vis–NIR light with a high responsivity of up to ∼250 mA/W and a photocurrent-to-dark current ratio (Ion/Ioff) of ∼106, fast response time of 8.6 μs, and superior repeatability and stability. The results show that the fabricated Te/n-type Si heterojunction photodetector has a strong potential to be utilized in ultrafast, broadband, and efficient photodetection applications.