Giant tunnel electroresistance through a Van der Waals junction by external ferroelectric polarization
Guangdi Feng, Yifei Liu, Qiuxiang Zhu, Zhenyu Feng, Shijun Luo, Cuijie Qin, Luqiu Chen, Yu Xu, Haonan Wang, Muhammad Zubair, Ke Qu, Chang Yang, Shenglan Hao, Fangyu Yue, Chun‐Gang Duan, Junhao Chu, Bobo Tian
Abstract
The burgeoning interest in two-dimensional semiconductors stems from their potential as ultrathin platforms for next-generation transistors. Nonetheless, there persist formidable challenges in fully obtaining high-performance complementary logic components and the underlying mechanisms for the polarity modulation of transistors are not yet fully understood. Here, we exploit both ferroelectric domain-based nonvolatile modulation of Fermi level in transitional metal dichalcogenides (MoS2) and quantum tunneling through nanoscale hexagonal boron nitride (h-BN). Our prototype devices, termed as vertical tunneling ferroelectric field-effect transistor, utilizes a Van der Waals MoS2/h-BN/metal tunnel junction as the channel. The Fermi level of MoS2 is bipolarly tuned by ferroelectric domains and sensitively detected by the direct quantum tunneling strength across the junction, demonstrating an impressive electroresistance ratio of up to 109 in the vertical tunneling ferroelectric field-effect transistor. It consumes only 0.16 fJ of energy to open a ratio window exceeding 104. This work not only validates the effectiveness of tailored tunnel barriers in manipulating electronic flow but also highlights a new avenue for the design flexibility and functional versatility of advanced ferroelectric memory technology. The authors propose vertical tunneling ferroelectric field-effect transistors based on asymmetric MoS2/h-BN/metal tunnel junction as channel. The Fermi level of MoS2 is bipolarly tuned by ferroelectric domains and detected by the quantum tunneling strength across the junction.